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| PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % (=200 nm) l Low capacitance l Analytical equipment l Optical measurement equipment s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * /Q /R /Q /R /Q /R /Q /R Package (mm) 2.7 x 15 6 x 7.6 8.9 x 10.1 15 x 16.5 Active area size (mm) 1.1 x 5.9 2.4 x 2.4 5.8 x 5.8 10 x 10 Effective active area (mm2) 5.9 5.7 5 33 100 -20 to +60 -20 to +80 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C) S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) S p ectral Peak response sensitivity range wavelength p Photo sensitivity S (A/W) p 200 nm Min. Typ. 0.5 0.62 0.5 0.62 0.5 0.62 0.5 0.62 0.10 0.10 0.10 0.10 0.12 0.12 0.12 0.12 S h ort circuit Te mp. Terminal Dark Rise tim e current Shunt capacitance current coefficient tr resistance Isc of Ct ID NEP VR=0 V Rsh 100 lx VR=10 m V VR=0 V ID VR=10 m V He-Ne GaAs RL= 1 k f=10 k Hz TCID laser LE D Min. Typ. Max. Min. Typ. 633 930 (pF) (G) (G) (W/Hz1/2) nm nm (A) (A) (pA) (times/ C) (s) 0.33 0.5 4.0 5.3 1.0 x 10-14 50 0.2 65 0.2 0.6 0.4 0.6 4.4 6.2 8.4 x 10-15 0.33 0.5 4.0 5.0 8.1 x 10-15 30 0.2 65 0.3 1 0.4 0.6 4.4 6.2 6.5 x 10-15 1.15 0.33 0.5 20 27 1.3 x 10-14 100 1 380 0.1 0.4 0.4 0.6 22 33 1.0 x 10-14 0.33 0.5 65 78 1.8 x 10-14 200 3 1100 0.05 0.2 1.5 x 10-14 0.4 0.6 70 95 Type No. (nm) 190 to 1100 S1337-16BQ 320 to 1100 S1337-16BR 190 to 1100 S1337-33BQ 320 to 1100 S1337-33BR 190 to 1100 S1337-66BQ 320 to 1100 S1337-66BR S1337-1010BQ 190 to 1100 S1337-1010BR 320 to 1100 (nm) 960 * Window material Q: quartz glass, R: resin coating 1 Si photodiode s Spectral response 0.7 (Typ. Ta =25 C) S1337 series s Photo sensitivity temperature characteristic +1.5 (Typ. ) 0.6 S1337-BR 0.5 0.4 0.3 S1337-BQ 0.2 0.1 S1337-BR 0 190 400 600 800 1000 TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) +1.0 +0.5 S1337-BQ 0 -1.5 190 400 600 800 1000 WAVELENGTH (nm) KSPDB0102EA WAVELENGTH (nm) KSPDB0053EB s Rise time vs. load resistance 1 ms (Typ. Ta=25 C, VR=0 V) S1337-1010BQ/BR s Dark current vs. reverse voltage 10 nA (Typ. Ta=25 C) S1337-66BQ/BR 100 s S1337-66BQ/BR 1 nA 10 s DARK CURRENT S1337-1010BQ/BR 100 pA RISE TIME 1 s S1337-16BQ/BR 10 pA S1337-33BQ/BR 100 ns S1337-16BQ/BR, -33BQ/BR 10 ns 102 1 pA 103 104 105 100 fA 0.01 0.1 1 10 LOAD RESISTANCE () KSPDB0103EA REVERSE VOLTAGE (V) KSPDB0104EB s Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 1 T 100 G 10 G 1 G 100 M S1337-1010BQ/BR 10 M 1 M 100 k 10 k -20 S1337-66BQ/BR S1337-16BQ/BR, -33BQ/BR SHUNT RESISTANCE 0 20 40 60 80 AMBIENT TEMPERATURE (C) KSPDB0105EA 2 Si photodiode s Dimensional outlines (unit: mm) S1337-16BQ 2.7 0.1 S1337 series S1337-16BR HOLE (2 x) 0.8 HOLE (2 x) 0.8 ACTIVE AREA 15 0.15 1.5 0.1 ACTIVE AREA PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 0.95 12.2 0.5 0.45 13.5 0.13 13.5 0.13 6.2 0.5 LEAD ANODE TERMINAL MARK 8.5 0.2 0.5 LEAD ANODE TERMINAL MARK 8.5 0.2 6.2 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0105EA 1.5 0.1 15 0.15 2.7 0.1 KSPDA0106EA S1337-33BQ 7.6 0.1 S1337-33BR 7.6 0.1 6.0 0.1 ACTIVE AREA 2.0 0.1 0.85 0.1 PHOTOSENSITIVE SURFACE 0.35 0.5 LEAD 10.5 0.35 0.75 0.5 LEAD 6.6 0.3 5.0 0.3 6.6 0.3 4.5 0.2 ANODE TERMINAL MARK ANODE TERMINAL MARK 4.5 0.2 5.0 0.3 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0107EA 10.5 2.0 0.1 PHOTOSENSITIVE SURFACE 6.0 0.1 ACTIVE AREA KSPDA0108EA 3 Si photodiode S1337 series S1337-66BQ 10.1 0.1 ACTIVE AREA 8.9 0.1 S1337-66BR 10.1 0.1 0.85 0.1 PHOTOSENSITIVE SURFACE 0.3 0.3 0.75 0.5 LEAD 10.5 0.5 LEAD 9.2 0.3 7.4 0.2 ANODE TERMINAL MARK 9.2 0.3 7.4 0.2 ANODE TERMINAL MARK 8.0 0.3 8.0 0.3 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0109EA KSPDA0110EA S1337-1010BQ 16.5 0.2 S1337-1010BR 16.5 0.2 15.0 0.15 ACTIVE AREA ACTIVE AREA 2.15 0.1 PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 1.0 0.1 0.3 0.3 0.9 0.5 LEAD 10.5 0.5 LEAD 15.1 0.3 12.5 0.2 ANODE TERMINAL MARK 15.1 0.3 12.5 0.2 ANODE TERMINAL MARK 13.7 0.3 13.7 0.3 Resin coating may extend a maximum of 0.1 mm above the upper surface of the package. KSPDA0111EA KSPDA0112EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 10.5 2.15 0.1 15.0 0.15 10.5 2.0 0.1 PHOTOSENSITIVE SURFACE 2.0 0.1 8.9 0.1 ACTIVE AREA 4 Cat. No. KSPD1032E03 Jul. 2004 DN |
Price & Availability of S1337-33BQ
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